Dummy gate electrode of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJr-Jung Lin, Chih-Han Lin, Ming-Ching Chang
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Abstract
The disclosure relates to a dummy gate electrode of a semiconductor device. An embodiment comprises a substrate comprising a first surface; an insulation region covering a portion of the first surface, wherein the top of the insulation region defines a second surface; and a dummy gate electrode over the second surface, wherein the dummy gate electrode comprises a bottom and a base broader than the bottom, wherein a ratio of a width of the bottom to a width of the base is from about 0.5 to about 0.9.
Claims20
A semiconductor device comprising:
- a substrate comprising a first surface;
- an insulation region covering a portion of the first surface;
- a gate electrode over the substrate, the gate electrode having a first base and a first bottom interposed between the first base and the substrate;
- a dummy gate electrode over the insulation region, the dummy gate electrode electrically isolated from other circuitry on the substrate, wherein the dummy gate electrode comprises a second bottom and a second base broader than the second bottom, wherein the second bottom is wider than the first bottom;
- and
- a dummy gate dielectric interposed between the dummy gate electrode and the insulation region.
A semiconductor device comprising:
- a substrate comprising a first surface;
- an insulation region covering a portion of the substrate;
- a fin through an opening in the insulation region;
- a gate electrode extending over an upper portion of the fin, wherein the gate electrode comprises a first base and a first bottom, the first bottom being positioned between the first base and the substrate, wherein a difference between a width of the first base and a width of the first bottom defines a first width difference;
- and
- a dummy gate electrode over the insulation region, wherein the dummy gate electrode is electrically isolated from electrical circuitry of the semiconductor device, wherein the dummy gate electrode comprises a second bottom and a second base broader than the second bottom, wherein a difference between a width of the second base and a width of the second bottom defines a second width difference, wherein the second width difference is greater than the first width difference, and wherein the width of the first bottom is different than the width of the second bottom.
A semiconductor device comprising:
- a substrate having one or more fins;
- an insulation region over the substrate along opposing sides of the one or more fins;
- a gate electrode extending over an upper portion of the one or more fins, the gate electrode having a first upper portion and a first lower portion;
- and
- a dummy gate electrode overlying the insulation region, the dummy gate electrode being electrically isolated from other circuitry on the substrate, the dummy gate electrode having a second upper portion and a second lower portion, the second upper portion of the dummy gate electrode having a width greater than a width of the second lower portion of the dummy gate electrode, the width of the second lower portion of the dummy gate electrode being less than a width of the first lower portion of the gate electrode.
Dependencies are inferred from the claim text.