Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof

A fabricating method of a lateral-diffused metal oxide semiconductor device, comprising:

• providing a substrate;
• forming a first deep well in the substrate, wherein the first deep well is a first conductive type;
• forming a second deep well in the substrate next to the first deep well, wherein the second deep well is a second conductive type;
• forming a drain in the first deep well;
• forming at least a field oxide layer on the substrate;
• forming a first dopant region in the second deep well, wherein the first dopant region is a second conductive type and the doping concentration of the first dopant region is higher than the doping concentration of the second deep well;
• forming a gate on the substrate between the first dopant region and the drain, wherein the gate covers a portion of the field oxide layer;
• and
• forming a common source disposed in the first dopant region inside of the gate.