SONOS device and method for fabricating the same
AssigneeMacronix International Co., Ltd.
InventorsChing-Chang Lin, Kai-Hsiang Chang, Chih-Yuan Wu, Kuang-Wen Liu
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Abstract
An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer later of the semiconductor device. For example, the semiconductor device may be a SONOS structure having an oxide-nitride-oxide (ONO) film that substantially surrounds the SONOS structure. The invention also provides methods for fabricating the semiconductor device and the SONOS structure of the invention.
Claims14
A semiconductor device comprising:
- a substrate;
- a dielectric layer disposed on the substrate, the dielectric layer having an undercut region;
- a conductive layer disposed on the dielectric layer, the conductive layer having a sidewall;
- and
- a charge trapping film substantially surrounding the dielectric layer and the sidewall of the conductive layer,
- wherein a portion of the substrate and conductive layer are removed to form the undercut region.
A semiconductor device fabricated according to a method comprising:
- providing a patterned cell having a dielectric layer, a conductive layer, and a hard mask layer;
- etching to form an undercut region in the dielectric layer;
- forming a first dielectric layer conformally along a sidewall of the patterned cell and a surface of the undercut region;
- depositing a data storage material on the first dielectric layer;
- substantially filling the undercut region to define a fill region;
- and
- forming a second dielectric layer on the data storage material,
- wherein a portion of the conductive layer and substrate are etched to form the undercut region.
Dependencies are inferred from the claim text.