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US 8,803,218 B2Granted
Nonvolatile memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorNam-Jae Lee
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Abstract
A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second sidewall and an upper surface of the floating gate, and a control gate formed over the dielectric layer.
Claims8
A nonvolatile memory device comprising:
- a plurality of floating gates formed over a semiconductor substrate;
- an insulator formed on a first sidewall of the plurality of floating gates;
- a dielectric layer formed on a second sidewall and an upper surface of the plurality of floating gates;
- and
- a control gate formed over the dielectric layer,
- wherein the plurality of floating gates have the same critical dimension, and spaces, which are alternately provided between the plurality of floating gates, have different critical dimension.
3 more elements
Dependencies are inferred from the claim text.