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US 8,803,215 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorSuk Goo Kim
Life of this patent
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Abstract
A semiconductor device includes a bit line and a common source line formed on a cell array region of a substrate, a first channel layer coupled to the common source line and extending higher than the common source line, a second channel layer coupled to the bit line and extending higher than the bit line, and a coupling pattern coupling a top of the first channel layer opposite to the common source line and a top of the second channel layer opposite to the bit line.
Claims9
A semiconductor device, comprising:
- a bit line and a common source line formed on a substrate;
- a first channel layer coupled to the common source line and extending higher than the common source line;
- a second channel layer coupled to the bit line and extending higher than the bit line;
- and
- a coupling pattern coupling a top of the first channel layer opposite to the common source line and a top of the second channel layer opposite to the bit line.
2 more elements
Dependencies are inferred from the claim text.