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US 8,803,213 B2Granted
Floating body memory cell apparatus and methods
AssigneeMicron Technology, Inc.
InventorPaul Grisham
Life of this patent
Estimating the term…
Abstract
Some embodiments include apparatus and methods having a base; a memory cell including a body, a source, and a drain; and an insulation material electrically isolating the body, the source, and the drain from the base, where the body is configured to store information. The base and the body include bulk semiconductor material. Additional apparatus and methods are described.
Claims17
An apparatus comprising:
- a base;
- a memory cell including a body, a source, and a drain, the body configured to store information, wherein the source and drain are located over the body and the base;
- a first insulation material electrically isolating the body, the source, and the drain from the base;
- a second insulation material electrically isolating the body, the source, and the drain from the base, wherein the first insulating material includes an oxide portion of the material of the base, and the second insulating material includes an oxide portion of the body;
- and
- a third insulation material directly between the first insulation material and the second insulation material, the first and third insulation materials including different materials, wherein the base and the body include a same bulk semiconductor material, wherein the third insulation material includes silicate glass, the silicate glass including phosphorus.
3 more elements
An apparatus comprising:
- a base;
- a first memory cell and a second memory cell, each of the first and second memory cells including a body, a source, a drain, a gate, and a gate insulation material between the gate and the source and drain, wherein the gate, the source, and the drain directly contact the gate insulation material, the body configured to store information, the gate of the first memory cell electrically coupled to the gate of the second memory cell, wherein the base and the body of each of the first and second memory cells have a same bulk silicon material, and wherein the entire source and the entire drain are located over the body and the base;
- a first insulation material electrically isolating the body, the source, and the drain of each of the first and second memory cells from the base;
- and
- a second insulation material electrically isolating the body, the source, and the drain of each of the first and second memory cells from the base, wherein the first insulation material includes an oxide portion of the material of the base, and the second insulation material includes an oxide portion of the body of each of the first and second memory cells.
2 more elements
An apparatus comprising:
- a substrate portion;
- a memory cell including a body region to store information, a first doped region, and a second doped region, and an insulation material in a trench between the first doped region and the second doped region, wherein at least a portion of the insulation material is located above the body region;
- a first material electrically isolating the substrate portion from the body region, the first doped region, and the second doped region, wherein the substrate portion and the body region include a same bulk semiconductor material;
- a second material electrically isolating the substrate portion from the body region, the first doped region, and the second doped region, wherein the first material includes an oxide portion of the material of the substrate portion, and the second material includes an oxide portion of the body region;
- and
- a third material directly between the first material and the second insulation material, wherein the first and third insulation materials include different materials.
3 more elements
An apparatus comprising:
- a substrate portion;
- a memory cell including a body region to store information, a first doped region, and a second doped region, and an insulation material in a trench between the first doped region and the second doped region, wherein at least a portion of the insulation material is located above the body region;
- a first material electrically isolating the substrate portion from the body region, the first doped region, and the second doped region, wherein the substrate portion and the body region include a same bulk semiconductor material;
- and
- a second material between at least a portion of the body region and the first material, the second material being electrically non-conductive, wherein the first material includes an oxide portion of the material of the substrate portion, and the second material includes an oxide portion of the body region.
2 more elements
Dependencies are inferred from the claim text.