Transistor with controllable compensation regions

A semiconductor device comprising at least one device cell, the at least one device cell comprising:

• a source region, a drain region, a body region and a drift region in a semiconductor body, wherein the body region is arranged between the source region and the drift region and the drift region is arranged between the body region and the drain region;
• a compensation region adjoining the drift region;
• a source electrode electrically contacting the source region and the body region;
• a gate electrode arranged adjacent to the body region and dielectrically insulated from the body region by a gate dielectric;
• and
• a coupling arrangement comprising a control terminal and being configured to electrically couple the compensation region to at least one of the body region, the source region and the source electrode dependent on a control signal received at the control terminal,
• wherein the coupling arrangement further comprises at least one first coupling transistor having a first channel region coupled between the compensation region and the least one of the body region, the source region, the source electrode and the gate electrode, and having a first control electrode coupled to the control terminal.