Manufacturing method of solid-state image pickup device and solid-state image pickup device

A solid-state image pickup device comprising:

• a first conductive semiconductor area which is provided on a semiconductor substrate;
• a transfer gate electrode which is provided in a predetermined position on an upper surface of the first conductive semiconductor area through a gate insulating film;
• a second conductive charge storage area which is provided in an area adjacent to the transfer gate electrode in the first conductive semiconductor area, and stores charges photoelectrically converted by a photoelectric conversion device;
• a second conductive floating diffusion area which is provided in an area opposed to the charge storage area across the transfer gate electrode in the first conductive semiconductor area;
• a sidewall which is provided on a side surface of the transfer gate electrode;
• an insulating film which extends from a circumference surface of the sidewall on a side of a charge storage area to a position partially covering an upper part of the charge storage area;
• and
• a first conductive charge storage layer which is provided in an upper surface part of the charge storage area, the first conductive charge storage layer having different depths with a shallower depth in a position closer to the transfer gate electrode than in a position away from the transfer gate electrode.