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US 8,803,203 B2Granted
Transistor including reentrant profile
AssigneeEastman Kodak Company
InventorsLee W. Tutt, Shelby F. Nelson
Life of this patent
Estimating the term…
Abstract
A transistor includes a substrate, an electrically conductive material layer, and an electrically insulating material layer. At least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer define a reentrant profile.
Claims26
A transistor comprising:
- a substrate;
- an electrically conductive material layer;
- and
- an electrically insulating material layer, the electrically conductive material layer being positioned between the substrate and the electrically insulating material layer, wherein the electrically insulating material layer extends beyond and overhangs the electrically conductive material layer such that the electrically insulating material layer and the electrically conductive material layer define a reentrant profile.
1 more element
A vertical transistor comprising:
- a substrate;
- a gate positioned on the substrate;
- and
- an electrically insulating material layer positioned on the gate, the electrically insulating material layer and the gate defining a mesa including a reentrant profile.
1 more element
Dependencies are inferred from the claim text.