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US 8,803,199 B2Granted
III-nitride semiconductor device with stepped gate
AssigneeInternational Rectifier Corporation
InventorsMichael A. Briere, Paul Bridger, Jianjun Cao
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Abstract
A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same.
Claims14
A III-nitride semiconductor device comprising:
- a first III-nitride body having one band gap, and a second III-nitride body having another band gap disposed over said first III-nitride body;
- a first insulation body situated over said second III-nitride body, and a second insulation body situated over said first insulation body;
- a gate well having a first mouth defined in said first insulation body;
- a stepped gate arrangement disposed at least partially within said gate well, said stepped gate arrangement including a gate dielectric formed along said first mouth, and a gate electrode over said gate dielectric, said gate dielectric and said gate electrode extending beyond said first mouth.
1 more element
A method of fabricating a III-nitride semiconductor device, said method comprising:
- forming a first III-nitride body having one band gap, and a second III-nitride body having another band gap disposed over said first III-nitride body;
- forming a first insulation body over said second III-nitride body;
- forming a second insulation body situated over said first insulation body;
- forming a gate well having a first mouth defined by first and second ledges in said first insulation body, each of said first and second ledges including an exposed top surface portion of said first insulation body;
- forming a gate dielectric along said first mouth, said gate dielectric extending beyond said first mouth to cover said exposed top surface portions of said first insulation body;
- forming a gate electrode over said gate dielectric, said gate electrode extending beyond said first mouth.
3 more elements
Dependencies are inferred from the claim text.