Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
AssigneeCree, Inc.
InventorsRichard Peter Smith, Scott T. Sheppard, Adam William Saxler, Yifeng Wu
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Abstract
Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.
Claims23
A Group III Nitride based field effect transistor (FET) having a power degradation of less than about 3.0 dB when operated at from about 9.65 volts/μm to about 24 volts/μm for at least about 10 hours.
A Group III Nitride based field effect transistor (FET) capable of withstanding high temperature, reverse bias test conditions of a drain-to-source voltage (VDS) of greater than about 28 volts for at least about 10 hours.
A Group III Nitride based field effect transistor (FET) having a power degradation of less than about 3.0 dB when operated at less than about 24 volts/μm for at least about 10 hours.
Dependencies are inferred from the claim text.