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US 8,803,195 B2Granted
Nanomembrane structures having mixed crystalline orientations and compositions
AssigneeWisconsin Alumni Research Foundation
InventorsMax G. Lagally, Shelley A. Scott, Donald E. Savage
Life of this patent
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Abstract
The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.
Claims17
A heterogeneous nanomembrane structure comprising:
- (a) a multilayer film comprising a single-crystalline layer of compressively strained semiconductor sandwiched between, and in direct contact with, a first single-crystalline layer of tensilely strained semiconductor and a second single-crystalline layer of tensilely strained semiconductor, wherein a plurality of holes extend into the multilayer film, through the first single-crystalline layer of tensilely strained semiconductor, through the single-crystalline layer of compressively strained semiconductor and then through the second single-crystalline layer of tensilely strained semiconductor;
- and
- (b) a filler semiconductor at least partially filling the plurality of holes in the multilayer film, wherein the filler semiconductor differs from the tensilely strained semiconductor in material composition, crystalline orientation, strain state, or a combination thereof.
Dependencies are inferred from the claim text.