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US 8,803,189 B2Granted
III-V compound semiconductor epitaxy using lateral overgrowth
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chia-Lin Yu, Ding-Yuan Chen, Wen-Chih Chiou, Hung-Ta Lin
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Abstract
A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer/nucleation layer.
Claims30
A circuit structure comprising:
- a substrate comprising an upper portion and a lower portion;
- a patterned mask layer over and in direct contact with the upper portion of the substrate, the patterned mask layer comprising a plurality of gaps;
- a buffer/nucleation layer disposed over the substrate and within the gaps in the patterned mask layer, wherein the buffer/nucleation layer comprises a silicon-containing material;
- an intermediate layer disposed below the buffer/nucleation layer within the gaps in the patterned mask layer, the intermediate layer consisting essentially of a metal, a metal-alloy, a metal-carbide, or a metal carbon-nitride;
- and
- a group-III group-V (III-V) compound semiconductor layer disposed within the gaps in the patterned mask layer and over the buffer/nucleation layer, and further extending above the gaps to form a continuous layer over the patterned mask layer and the gaps in the patterned mask layer.
3 more elements
A circuit structure comprising:
- a substrate;
- a mask layer over the substrate, the mask layer having openings exposing the substrate;
- a buffer/nucleation layer over a top surface of the substrate and in the openings, wherein the buffer/nucleation layer comprises a silicon-containing material;
- an intermediate layer disposed below the buffer/nucleation layer within the openings of the mask layer, the intermediate layer consisting essentially of a metal, a metal-alloy, a metal-carbide, or a metal carbon-nitride;
- and
- a group-III group-V (III-V) compound semiconductor layer in the openings of the mask layer and over the buffer/nucleation layer, and further extending above the mask layer to form a continuous layer over the mask layer.
3 more elements
Dependencies are inferred from the claim text.