Semiconductor structure
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsHao-Su Zhang, Jun Zhu, Qun-Qing Li, Guo-Fan Jin, Shou-Shan Fan
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Abstract
A semiconductor structure includes a first semiconductor layer, a active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer stacked in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.
Claims15
A semiconductor structure comprising:
- a source layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence;
- a third optical symmetric layer disposed on and contacting a surface of the second semiconductor layer away from the first semiconductor layer, wherein a refractive index of the third optical symmetric layer is in a range from about 1.2 to about 1.5;
- a metallic layer disposed on and contacting a surface of the third optical symmetric layer away from the first semiconductor layer;
- a fourth optical symmetric layer disposed on and contacting a surface of the metallic layer away from the first semiconductor layer, wherein a refractive index of the fourth optical symmetric layer is in a range from about 1.2 to about 1.5;
- and
- a first optical symmetric layer disposed on and contacting a surface of the fourth optical symmetric layer away from the first semiconductor layer, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.
A semiconductor structure comprising:
- a substrate;
- a source layer disposed on a surface of the substrate, the source layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence;
- a third optical symmetric layer disposed on and contacting a surface of the second semiconductor layer away from the substrate, wherein a refractive index of the third optical symmetric layer is in a range from about 1.2 to about 1.5;
- a metallic layer disposed on and contacting a surface of the third optical symmetric layer away from the substrate;
- a fourth optical symmetric layer disposed on and contacting a surface of the metallic layer away from the substrate, wherein a refractive index of the fourth optical symmetric layer is in a range from about 1.2 to about 1.5;
- a first optical symmetric layer disposed on and contacting a surface of the fourth optical symmetric layer away from the substrate, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3;
- and
- a second optical symmetric layer disposed on and contacting a surface of the first optical symmetric layer away from the substrate, wherein a refractive index difference between the substrate and the second optical symmetric layer is less than or equal to 0.3.
A semiconductor structure comprising:
- a source layer comprising an N-typed semiconductor layer, an active layer, and a P-typed semiconductor layer stacked in sequence;
- a third optical symmetric layer disposed on and contacting a surface of the P-typed semiconductor layer away from the N-typed semiconductor layer, wherein a refractive index of the third optical symmetric layer is in a range from about 1.2 to about 1.5;
- a metallic layer disposed on and contacting a surface of the third optical symmetric layer away from the N-typed semiconductor layer;
- a fourth optical symmetric layer disposed on and contacting a surface of the metallic layer away from the N-typed semiconductor layer, wherein a refractive index of the fourth optical symmetric layer is in a range from about 1.2 to about 1.5;
- and
- a first optical symmetric layer disposed on and contacting a surface of the fourth optical symmetric layer away from the N-typed semiconductor layer, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.
Dependencies are inferred from the claim text.