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US 8,803,174 B2Granted
Light emitting device, light emitting device package
AssigneeLG Innotek Co., Ltd.
InventorsHwan Hee Jeong, Sang Youl Lee, Ji Hyung Moon, June O Song, Kwang Ki Choi, Dae Sung Kang
Life of this patent
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Abstract
Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.
Claims20
A light emitting device comprising:
- a nitride semiconductor layer;
- an electrode on a top surface of the nitride semiconductor layer;
- a light emitting structure under a bottom surface of the nitride semiconductor layer, the light emitting structure including a first conductive type semiconductor layer at the bottom surface of the nitride semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and the second conductive type semiconductor layers;
- and
- a conductive layer under a bottom surface of the light emitting structure,
- wherein the nitride semiconductor layer has a band gap energy lower than a band gap energy of the first conductive type semiconductor layer,
- wherein the nitride semiconductor layer is directly contacted with a top surface of the first conductive type semiconductor layer,
- wherein the electrode is directly contacted with the nitride semiconductor layer and the first conductive type semiconductor layer,
- wherein a top surface of the conductive layer is directly contacted with a bottom surface of the second conductive type semiconductor layer,
- wherein the nitride semiconductor layer includes a semiconductor having a compositional formula of InxAlyGa1-x-yN (0.15<x<1, 0<y<0.15, 0<x+y<1),
- wherein the first conductive type semiconductor layer includes an n-type semiconductor layer and the second conductive type semiconductor layer includes a p-type semiconductor layer,
- wherein the nitride semiconductor layer is formed of a semiconductor layer having a conductivity lower than that of the first conductive type semiconductor layer.
9 more elements
A light emitting device comprising:
- a nitride semiconductor layer including a plurality of holes;
- a current spreading layer on a top surface of the nitride semiconductor layer;
- an electrode on a top surface of the current spreading layer;
- a light emitting structure under a bottom surface of the nitride semiconductor layer, the light emitting structure including a first conductive type semiconductor layer of the bottom surface of the nitride semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and a second conductive type semiconductor layers;
- and
- a conductive layer under the light emitting structure, the conductive layer including a reflective layer,
- wherein the nitride semiconductor layer has a band gap energy lower than a band gap energy of the first conductive type semiconductor layer,
- wherein the nitride semiconductor layer is directly contacted with a top surface of the first conductive type semiconductor layer,
- wherein the electrode is directly contacted with the nitride semiconductor layer and the first conductive type semiconductor layer,
- wherein a top surface of the conductive layer is directly contacted with a bottom surface of the second conductive type semiconductor layer,
- wherein the nitride semiconductor layer includes a semiconductor having a compositional formula of InxAlyGa1-x-yN (0.15<x<1, 0<y<0.15, 0<x+y<1),
- wherein the first conductive type semiconductor layer includes an n-type semiconductor layer and the second conductive type semiconductor layer includes a p-type semiconductor layer,
- wherein the nitride semiconductor layer is formed of an undoped semiconductor layer,
- wherein the nitride semiconductor layer has a thickness in a range of about 1 nm to about 99 nm.
11 more elements
A light emitting device package comprising:
- a body;
- a first and a second lead electrodes on the body;
- a light emitting device on at least one of the first and the second lead electrodes;
- and
- a molding member covering the light emitting device,
- wherein the light emitting device comprises:
- a nitride semiconductor layer;
- an electrode on a top surface of the nitride semiconductor layer;
- a light emitting structure under a bottom surface of the nitride semiconductor layer, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and a second conductive type semiconductor layers;
- and
- a conductive layer under a bottom surface of the light emitting structure,
- wherein the nitride semiconductor layer has a band gap energy lower than a band gap energy of the first conductive type semiconductor layer,
- wherein the nitride semiconductor layer is directly contacted with the first conductive type semiconductor layer,
- wherein the electrode is directly contacted with the nitride semiconductor layer and the first conductive type semiconductor layer,
- wherein a top surface of the conductive layer is directly contacted with a bottom surface of the second conductive type semiconductor layer,
- wherein the nitride semiconductor layer includes a semiconductor having a compositional formula of InxAlyGa1-x-yN (0.15<x<1, 0<y<0.15, 0<x+y<1),
- wherein the first conductive type semiconductor layer includes an n-type semiconductor layer and the second conductive type semiconductor layer includes a p-type semiconductor layer,
- wherein the nitride semiconductor layer is formed of a semiconductor layer having conductivity lower than that of the first conductive type semiconductor layer.
15 more elements
Dependencies are inferred from the claim text.