Top emission inverted organic light emitting diode display device having electrode patterns formed from a same material as a conductive pattern contacting the TFT

A top-emission inverted organic light emitting diode display device, comprising:

• first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate;
• at least one thin film transistor formed on the light generation area;
• a passivation layer formed to cover the thin film transistor on the metal substrate and including primary contact holes which partially expose the thin film transistor and the first and second pad portions;
• a conductive pattern formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the primary contact holes;
• a planarization layer formed on the passivation layer including the conductive pattern;
• a first cathode electrode formed on the light generation area and electrically connected to the conductive pattern;
• a second cathode electrode formed on the first cathode electrode;
• and
• a bank layer formed on the planarization layer and formed to expose the second cathode electrode,
• wherein the planarization layer includes secondary contact holes corresponding to the primary contact holes,
• wherein each of the first and second pad portions includes an upper pad electrode formed from the same material as the conductive pattern,
• wherein the upper pad electrodes are exposed through the secondary contact holes,
• wherein the bank layer is formed to expose the upper pad electrode, and
• wherein the conductive pattern is only formed at an area corresponding to the thin film transistor.