Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device
AssigneeSharp Kabushiki Kaisha
InventorTakeshi Kamikawa
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Abstract
A nitride semiconductor light emitting device includes an n-type GaN substrate (101) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (101). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (108), a p-type AlGaInN cladding layer (107) under the p-type AlGaInN contact layer (108), and a p-type AlGaInN layer (106). A protection film (113) made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.
Claims10
A nitride semiconductor light emitting device comprising:
- a nitride semiconductor substrate;
- and
- a nitride semiconductor layer having a p-type nitride semiconductor layer formed on the nitride semiconductor substrate, wherein
- the nitride semiconductor layer has a ridge stripe part on a top face thereof,
- the ridge stripe part has a current injection region into which current is injected,
- an electrode is formed over the ridge stripe part,
- an electrode pad is formed on the top face of the nitride semiconductor layer at least over the ridge stripe part and a part adjacent thereto, the electrode pad being in contact with the electrode,
- a protection film is formed to cover at least a part of the electrode pad located over the ridge stripe part and the part adjacent thereto, a part of the protection film not located over the ridge stripe part being so formed as to be partially exposed to external conditions, and
- the protection film is made up of a silicon nitride film and/or a silicon nitride oxide film.
Dependencies are inferred from the claim text.