High electron mobility transistor and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHan-Chin Chiu, Po-Chun Liu, Chi-Ming Chen, Chung-Yi Yu, King-Yuen Wong
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Abstract
A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is greater than the first band gap. A crystalline interfacial layer is overlying and in contact with the second III-V compound layer. A gate dielectric is over the crystalline interfacial layer. A gate electrode is over the gate dielectric. A source region and a drain region are over the second III-V compound layer, and are on opposite sides of the gate electrode.
Claims20
A High Electron Mobility Transistor (HEMT) comprising:
- a first III-V compound layer having a first band gap;
- a second III-V compound layer having a second band gap over the first III-V compound layer, wherein the second band gap is greater than the first band gap;
- a crystalline interfacial layer over and in contact with the second III-V compound layer;
- a gate dielectric over the crystalline interfacial layer;
- a gate electrode over the gate dielectric;
- and
- a source region and a drain region over the second III-V compound layer and on opposite sides of the gate electrode.
A High Electron Mobility Transistor (HEMT) comprising:
- a first III-V compound layer;
- a second III-V compound layer over the first III-V compound layer;
- a crystalline interfacial layer over and in contact with the second III-V compound layer;
- a dielectric passivation layer over the crystalline interfacial layer;
- a gate dielectric comprising a portion penetrating through the dielectric passivation layer to contact a top surface of a portion of the crystalline interfacial layer;
- a gate electrode over the gate dielectric;
- and
- a source region and a drain region over the second III-V compound layer and on opposite sides of the gate electrode.
A method of forming a High Electron Mobility Transistor (HEMT), the method comprising:
- epitaxially growing a first III-V compound layer;
- epitaxially growing a second III-V compound layer over the first III-V compound layer;
- growing a crystalline interfacial layer over and in contact with the second III-V compound layer;
- forming a gate electrode over the III-V compound layer;
- and
- forming a source region and a drain region over the second III-V compound layer and on opposite sides of the gate electrode.
Dependencies are inferred from the claim text.