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US 8,803,155 B2Granted
Thin-film transistor sensor and method of manufacturing the TFT sensor
AssigneeSamsung Display Co., Ltd.
InventorsMu-Gyeom Kim, Chang-Mo Park
Life of this patent
Estimating the term…
Abstract
According to an aspect of the present invention, there is provided a thin-film transistor (TFT) sensor, including a bottom gate electrode on a substrate, an insulation layer on the bottom gate electrode, an active layer in a donut shape on the insulation layer, the active layer including a channel through which a current generated by a charged body flows, an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other.
Claims17
A thin-film transistor (TFT) sensor, comprising:
- a bottom gate electrode on a substrate;
- an insulation layer on the bottom gate electrode;
- an active layer in a donut shape on the insulation layer, the active layer including a first channel and a second channel through which current generated by a charged body flows and including a hole for separation of the first channel and the second channel;
- an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and including a middle portion that overlaps the hole for separation of the first channel and the second channel;
- a source electrode and a drain electrode burying the first contact hole and the second contact holes, the source electrode and the drain electrodes being symmetrically disposed on a pair of first opposite regions of the middle portion of the etch stop layer so as to face each other;
- a first top gate electrode and a second top gate electrode that are symmetrically disposed on a pair of second opposite regions of the middle portion of the etch stop layer so as to face each other, the first top gate electrode and the second top gate electrode being spaced apart from each other and controlling flow of the current through the first channel and the second channels, respectively,
- wherein each of the first opposite regions does not overlap with each of the second opposite regions;
- and
- wherein changes in amounts of the currents flowing in the first channel and the second channels occur based on movement of the charged body relative to the first top gate electrode and the second top gate electrodes, and correspond to a touch direction and a touch intensity of the charged body.
6 more elements
A thin-film transistor (TFT) sensor, comprising:
- a bottom gate electrode on a substrate;
- an insulation layer on the bottom gate electrode;
- an active layer in a donut shape on the insulation layer, the active layer including a hole for channel separation at the center of the active layer, and wherein the donut shape is generally a square or rectangle having four outer corners;
- an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, the first contact hole and the second contact hole being symmetrically disposed on two of the four outer corners, diagonally facing each other;
- and
- an electrode layer on the etch stop layer corresponding to areas of edges of the active layer, the electrode layer including a source electrode and a drain electrode that bury the first contact hole and the second contact hole and are symmetrically disposed on the two of the four outer corners, and including a first top gate electrode and a second top gate electrode that are symmetrically disposed on two remaining corners of the four outer corners without physically contacting the source electrode and the drain electrode.
3 more elements
A thin-film transistor (TFT) sensor array comprising:
- TFT sensors arranged by rotating each of the TFT sensors by a predetermined angle from corresponding adjacent ones of the TFT sensors;
- wherein each of the TFT sensors includes:
- a bottom gate electrode on a substrate;
- an insulation layer on the bottom gate electrode;
- an active layer in a donut shape on the insulation layer, the active layer including a hole for channel separation at the center of the active layer, and wherein the donut shape is generally a square or rectangle having four outer corners;
- an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, the first contact hole and the second contact holes being symmetrically disposed on two of the four outer corners, diagonally facing each other;
- a source electrode and a drain electrode burying the first contact hole and the second contact holes, the source electrode and the drain electrodes being symmetrically disposed on the two of the four outer corners;
- and
- a first top gate electrode and a second top gate electrode being symmetrically disposed on two remaining corners of the four outer corners without physically contacting the source electrode and the drain electrode.
6 more elements
Dependencies are inferred from the claim text.