Luminescent device and process of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSatoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
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Abstract
In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
Claims25
A light-emitting device comprising:
- a transistor having a gate electrode;
- a first insulating film over and in direct contact with the gate electrode;
- a second insulating film over the first insulating film;
- a third insulating film over and in direct contact with the second insulating film;
- and
- a light-emitting element electrically connected to the transistor,
- wherein the first insulating film comprises silicon nitride,
- wherein the second insulating film contains fluorine, and
- wherein the light-emitting element comprises an anode, a cathode, and an organic compound layer between the anode and the cathode.
A light-emitting device comprising:
- a transistor having a gate electrode;
- a first insulating film over and in direct contact with the gate electrode;
- a second insulating film over the first insulating film;
- a third insulating film over and in direct contact with the second insulating film;
- a light-emitting element electrically connected to the transistor;
- and
- an organic resin film between the transistor and the light-emitting element,
- wherein the first insulating film comprises silicon nitride,
- wherein the second insulating film contains fluorine, and
- wherein the light-emitting element comprises an anode, a cathode, and an organic compound layer between the anode and the cathode.
A light-emitting device comprising:
- a transistor having a gate electrode, a source region, and a drain region;
- a first insulating film over and in direct contact with the gate electrode;
- a second insulating film over the first insulating film;
- a third insulating film over and in direct contact with the second insulating film;
- a light-emitting element electrically connected to the transistor;
- and
- a conductive film electrically connected to one of the source region and the drain region,
- wherein the first insulating film comprises silicon nitride,
- wherein the second insulating film contains fluorine,
- wherein the light-emitting element comprises an anode, a cathode, and an organic compound layer between the anode and the cathode,
- wherein the conductive film is provided over the second insulating film, and
- wherein the conductive film overlaps with one of the source region and the drain region.
Dependencies are inferred from the claim text.