Bond pad monitoring structure and related method of detecting significant alterations

A bond pad condition sensing system comprising:

• a sense structure comprising
• a bond pad,
• a patterned portion of a metal layer of an integrated circuit device wherein wirings of the integrated circuit are defined, coincident with a footprint area of said bond pad, having defined therein at least one interconnected first portion coupled to a node of the integrated circuit device, and to be externally accessible through a device pin coupled to said bond pad, and at least one interconnected second portion, interleaved with said at least one interconnected first portion and electrically isolated therefrom;
• a dielectric inter-metal isolation layer over said patterned portion, and
• a plurality of metal interconnects through said dielectric inter-metal isolation layer contacting said at least one interconnected first portion,
• said bond pad defined in an upper metal layer over said dielectric inter-metal isolation layer, coupled to said at least one interconnected second portion by said plurality of metal interconnects, defining a substantially equipotential structure, and capacitively coupled to said at least one interconnected second portion;
• a voltage source coupled to said sense structure and configured to generate a voltage step stimulating signal;
• and
• a sensing circuit comprising a comparator configured to compare a step response waveform of said sense structure with reference waveform, and an output stage configured to generate a diagnostic signal indicative of an output state of said comparator based upon the voltage step stimulating signal.

An integrated circuit comprising:

• a bond pad;
• a patterned metal layer portion below a footprint area of said bond pad, and having defined therein at least one interconnected first portion, and at least one interconnected second portion interleaved with said at least one interconnected first portion and electrically isolated therefrom;
• a dielectric inter-metal isolation layer over said patterned metal layer portion;
• and
• a plurality of metal interconnects through said dielectric inter-metal isolation layer contacting said at least one interconnected first portion;
• said bond pad defined over said dielectric inter-metal isolation layer, coupled to said at least one interconnected second portion by said plurality of metal interconnects, and capacitively coupled to said at least one interconnected second portion.

A bond pad condition sensing system comprising:

• an integrated circuit comprising
• a bond pad,
• a patterned metal layer portion below a footprint area of said bond pad, and having defined therein at least one interconnected first portion, and at least one interconnected second portion interleaved with said at least one interconnected first portion and electrically isolated therefrom,
• a dielectric inter-metal isolation layer over said patterned metal layer portion, and
• a plurality of metal interconnects through said dielectric inter-metal isolation layer contacting said at least one interconnected first portion,
• said bond pad defined over said dielectric inter-metal isolation layer, coupled to said at least one interconnected second portion by said plurality of metal interconnects, and capacitively coupled to said at least one interconnected second portion;
• a voltage source coupled to said sense structure and configured to generate a voltage step stimulating signal;
• and
• a sensing circuit comprising a comparator configured to compare a step response waveform from said integrated circuit with a reference waveform, and an output stage configured to generate a diagnostic signal indicative of an output state of said comparator based upon the voltage step stimulating signal.

A method of making an integrated circuit comprising:

• forming a bond pad;
• forming a patterned metal layer portion to be below a footprint area of the bond pad, and having defined therein at least one interconnected first portion, and at least one interconnected second portion interleaved with the at least one interconnected first portion and electrically isolated therefrom;
• forming a dielectric inter-metal isolation layer over the patterned metal layer portion;
• and
• forming a plurality of metal interconnects through the dielectric inter-metal isolation layer to contact the at least one interconnected first portion;
• the bond pad being defined over the dielectric inter-metal isolation layer, coupled to the at least one interconnected second portion by the plurality of metal interconnects, and capacitively coupled to the at least one interconnected second portion.