Hydrazine-free solution deposition of chalcogenide films
AssigneeInternational Business Machines Corporation
InventorsDavid B. Mitzi, Matthew W. Copel
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Abstract
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
Claims8
A hydrazinium metal chalcogenide prepared by a process comprising:
- contacting:
- at least one metal chalcogenide, a hydrazine compound represented by the formula:
- R1R2N—NR3R4
- wherein each of R1, R2, R3 and R4 is independently selected from the group consisting of:
- hydrogen, aryl, methyl, ethyl and a linear, branched or cyclic alkyl of 3-6 carbon atoms, and optionally an elemental chalcogen selected from the group consisting of:
- S, Se, Te and a combination thereof, to produce a solution of a hydrazinium-based precursor of said metal chalcogenide in said hydrazine compound;
- and
- isolating hydrazinium-based precursor of said metal chalcogenide as a substantially pure product.
Dependencies are inferred from the claim text.