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US 8,803,132 B2Granted
Self-aligned double-gate graphene transistor
AssigneeInternational Business Machines Corporation
InventorsDamon B. Farmer, Aaron D. Franklin, Joshua T. Smith
Life of this patent
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Abstract
A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.
Claims20
A semiconducting device, comprising:
- a graphene sheet formed on a substrate;
- a first contact coupled to the graphene sheet and a second contact coupled to the graphene sheet and separated from the first contact by a gap;
- at least one slot formed in the graphene sheet having a width that allows an etchant to pass through the graphene sheet;
- and
- a recess formed in the substrate beneath the graphene sheet via etchant passing through the graphene sheet.
2 more elements
A transistor, comprising:
- a graphene sheet disposed directly on a substrate;
- two or more contacts formed on the graphene sheet to define a gap between the two or more contacts;
- at least one slot in the graphene sheet having a width that allows an etchant to pass through the graphene sheet in the gap;
- and
- a gate material in the gap defined by the one or more contacts, wherein the gate material fills a recess in the gap.
2 more elements
A self-aligned graphene transistor, comprising:
- a graphene sheet disposed on a substrate of the graphene transistor;
- a source contact on the substrate over the graphene sheet;
- a drain contact on the substrate over the graphene sheet, wherein the drain contact is separated from the source contact by a gap;
- at least one slot in the graphene sheet having a width that allows an etchant to pass through the graphene sheet;
- and
- a gate region in the gap that includes a recess formed by a passing the etchant through the graphene sheet to remove a portion of the substrate in the gap.
3 more elements
Dependencies are inferred from the claim text.