Patterning contacts in carbon nanotube devices

A transistor device, comprising:

• a carbon nanotube disposed over a surface of a substrate, the carbon nanotube being partially disposed within a protective electrically insulating layer comprised of SiO2;
• a gate stack disposed over the substrate, where a first portion of a length of the carbon nanotube not covered by the protective electrically insulating layer passes through the gate stack and where the first portion of the length defines a channel of the transistor device;
• a source contact disposed adjacent to a first side of the gate stack, where a second portion of the length of carbon nanotube not covered by the protective electrically insulating layer is conductively electrically coupled to the source contact;
• and
• a drain contact disposed adjacent to a second, opposite side of the gate stack, where a third portion of the length of carbon nanotube not covered by the protective electrically insulating layer is conductively electrically coupled to the drain contact,
• where said gate stack, said source contact and said drain contact are contained within the protective electrically insulating layer and within an electrically insulating organic planarization layer that is disposed over the protective electrically insulating layer, where
• the gate stack is comprised of a layer of gate insulator that is disposed upon the first portion of the length of the carbon nanotube and a layer of gate metal that is disposed upon the layer of gate insulator, where the layer of gate insulator is comprised of a high dielectric constant material, and where
• the layer of gate insulator material comprised of the high dielectric constant material is also disposed between and in contact with a sidewall of the drain contact and a first sidewall of the gate metal and between and in contact with a sidewall of the source contact and a second opposite sidewall of the gate metal.