Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
AssigneeSony Corporation
InventorAtsushi Toda
Life of this patent
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Abstract
A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.
Claims18
A solid-state imaging device comprising:
- a substrate with a plurality of pixels;
- a plurality of charge accumulation regions in the substrate respectively corresponding to the pixels;
- for each pixel, a pixel electrode on the substrate and over the respective charge accumulation region, the pixel electrode electrically coupled to the respective charge accumulation region;
- for each pixel, a first electrode carried on the substrate that is separated from the respective pixel electrode by an insulation film and that is electrically connected to the respective pixel electrode by a plug disposed in the insulation film, the first electrodes positioned in a common layer;
- a second electrode disposed opposed to the first electrodes;
- a photoelectric conversion layer common to all of the pixels, which is disposed between the first electrodes and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a single conductive layer, the photoelectric conversion layer effective to convert incident light into electrical charges suitable for generating an image signal.
A solid-state imaging device comprising:
- a first electrode;
- a second electrode disposed opposed to the first electrode;
- a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a single conductive layer;
- a pixel electrode, wherein the pixel electrode is separated from the first electrode by an insulation film, and wherein the pixel electrode is electrically connected to the first electrode by a plug that extends through the insulation film.
A method for manufacturing a solid-state imaging device, the method comprising the steps of:
- forming a charge accumulation layer on a silicon substrate;
- forming a pixel electrode on the charge accumulation layer;
- forming an insulating film covering the pixel electrode;
- forming a plug, which is connected to the pixel electrode, in the insulating film;
- forming a first electrode, which is connected to the plug, on the insulating film;
- forming a photoelectric conversion layer having a single conductive layer in which narrow gap semiconductor quantum dots are dispersed;
- and forming a second electrode on the photoelectric conversion layer.
Dependencies are inferred from the claim text.