Resistance change memory

A resistance change memory comprising:

• resistance change elements arrayed with a first space in a first direction and with a second space wider than the first space in a second direction orthogonal to the first direction, each of the resistance change elements including a variable resistance layer, a first conductive layer on the variable resistance layer, and a first insulating layer covering a sidewall of at least the variable resistance layer;
• second conductive layers disposed on sidewalls of the first insulating layer and the first conductive layer of resistance change elements respectively, each of the second conductive layers having a width greater than or equal to a half of the first space in the first direction and having a width less than a half of the second space in the second direction, the second conductive layers functioning as a first bit line extending in the first direction by connecting the resistance change elements arrayed in the first direction;
• a second insulating layer disposed on a sidewall of the first bit line, and not filling the second space;
• and
• a third conductive layer functioning as a second bit line extending in the first direction by filling the second space.