Method for forming a PCRAM with low reset current
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsShyue Seng (Jason) Tan, Eng Huat Toh
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Abstract
Phase-change memory structures are formed with ultra-thin heater liners and ultra-thin phase-change layers, thereby increasing heating capacities and lowering reset currents. Embodiments include forming a first interlayer dielectric (ILD) over a bottom electrode, removing a portion of the first ILD, forming a cell area, forming a u-shaped heater liner within the cell area, forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD, forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion, and forming a dielectric spacer surrounding the protruding portion.
Claims10
A method comprising:
- forming a first interlayer dielectric (ILD) over a bottom electrode;
- removing a portion of the first ILD, forming a cell area;
- forming a u-shaped heater liner within the cell area;
- forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD;
- forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion;
- and
- forming a dielectric spacer surrounding the protruding portion.
A method comprising:
- forming a first interlayer dielectric (ILD) over a bottom electrode;
- forming a second ILD on the first ILD;
- removing a portion of the first and second ILDs, forming a cavity;
- conformally depositing a heater liner over the second ILD and within the cavity;
- planarizing the heater liner down to the second ILD;
- filling the cavity with an interlayer dielectric material;
- removing a portion of the heater liner adjacent the second ILD and the second ILD, leaving a portion of the interlayer dielectric material protruding from the cavity;
- forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion;
- forming a dielectric spacer surrounding the protruding portion;
- and
- forming a top electrode over the first ILD, the dielectric spacer, and the protruding portion.
Dependencies are inferred from the claim text.