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US 8,803,120 B2Granted
Diode and resistive memory device structures
AssigneeSpansion LLC
InventorsManuj Rathor, An Chen, Steven Avanzino, Suzette K. Pangrle
Life of this patent
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Abstract
In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.
Claims4
An electronic device comprising:
- a diode and a resistive memory device in series, the diode comprising a layer comprising a region of a first conductivity type and a region of a second conductivity type opposite the first conductivity type, the resistive memory device comprising a first electrode comprising the region of the first conductivity type of the diode comprising the region of first conductivity type and the region of second conductivity type, a switching layer, and a second electrode.
Dependencies are inferred from the claim text.