Semiconductor constructions and memory arrays
AssigneeMicron Technology, Inc.
InventorsAndrea Redaelli, Cinzia Perrone
Life of this patent
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Abstract
Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
Claims10
A semiconductor construction, comprising:
- an electrically conductive interconnect having an upper surface;
- an electrically conductive structure over the electrically conductive interconnect, the electrically conductive structure comprising a horizontal first portion and a non-horizontal second portion joined to the first portion at a corner, at least some of the first portion being along the upper surface, the second portion having an upper edge, said upper edge being offset relative to the upper surface of the electrically conductive interconnect so that the upper edge is not directly over said upper surface;
- and
- wherein the upper edge of the second portion is against a chalcogenide material of a phase change memory cell.
A semiconductor construction, comprising:
- an electrically conductive interconnect having an upper surface;
- an electrically conductive structure over the electrically conductive interconnect, the electrically conductive structure comprising a horizontal first portion and a non-horizontal second portion joined to the first portion at a corner, at least some of the first portion being along the upper surface, the second portion having an upper edge, said upper edge being offset relative to the upper surface of the electrically conductive interconnect so that the upper edge is not directly over said upper surface;
- and
- wherein:
- the conductive structure and interconnect together form a fuse configured to break at an interface where the horizontal first portion contacts the upper surface of the interconnect;
- the conductive structure comprises titanium;
- and
- the interconnect comprises tungsten.
Dependencies are inferred from the claim text.