Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation

A system for providing an improved beam current during silicon ion implantation, comprising:

• an ion source apparatus partially defined by an arc chamber wall, wherein the chamber comprises a silicon ion source disposed at least partially within the chamber wall;
• one or more supply vessels in fluid communication with said ion source apparatus, said vessels storing a silicon-based dopant gas composition, said composition comprising a first silicon-based species and a second species, wherein said second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of the ion source during implantation of active silicon ions;
• one or more supply feed lines corresponding to the one or more supply vessels, said feed lines extending from the one or more supply vessels through the wall into the chamber;
• wherein said one or more vessels are configured to dispense said silicon-based dopant composition through said supply feed lines and into said ion source apparatus thereby allowing the silicon ion source to ionize the silicon-based dopant gas composition to generate at least a portion of the active silicon ions from at least said first silicon-based species, the active silicon ions producing an increased beam current in comparison to a beam current generated solely from SiF4.

A method for increasing beam current during silicon ion implantation, comprising:

• selecting a first silicon-based species;
• selecting a second species having an ionization cross-section higher than that of the first silicon-based species at a predetermined operating arc voltage of an ion source to be utilized during generation and implantation of active silicon ions;
• providing the first silicon-based and the second species in one or more supply vessels;
• flowing the first silicon-based species and the second species from the one or more supply vessels into an ion source apparatus;
• ionizing the first silicon-based species;
• generating active silicon ions;
• and
• producing an increased beam current in comparison to a beam current generated solely from SiF4, wherein said increased beam current extends source life in comparison to a beam current generated solely from SiF4.