Sample preparation apparatus and sample preparation method
AssigneeHitachi High-Tech Science Corporation
InventorXin Man
Life of this patent
Estimating the term…
Abstract
Provided is an apparatus for preparing a sample including: a sample stage that supports a sample; a focused ion beam column that applies a focused ion beam to the same sample and processes the sample; and an irradiation area setting unit that sets a focused-ion-beam irradiation area including a first irradiation area used to form an observation field irradiated with an electron beam in order to detect backscattered electrons and a second irradiation area used to form a tilted surface tilted with respect to the normal line of the observation field with an angle of 67.5° or more and less than 90°.
Claims20
A sample preparation apparatus comprising:
- a sample stage configured to support a sample;
- a focused ion beam column configured to apply a focused ion beam to the sample and process the sample;
- and
- an irradiation area setting unit configured to set a focused-ion-beam irradiation area comprising:
- a first irradiation area for forming an observation field, which is to be irradiated with an electron beam in order to detect backscattered electrons;
- and
- a second irradiation area for forming a tilted surface, which is connected to the observation field and a surface of the sample, and which is tilted with respect to a normal direction of the observation field at a tilt angle of 67.5° or more and less than 90°.
A sample preparation method for preparing a sample used to observe a diffraction pattern of backscattered electrons, the method comprising:
- forming an observation field, which is to be irradiated with an electron beam for detecting the backscattered electrons, by applying a focused ion beam to the sample;
- and
- forming a tilted surface, which is connected to the observation field and the surface of the sample, and which is tilted with respect to a normal line of the observation field with an angle of 67.5° or more and less than 90° by applying the focused ion beam to the sample.
A sample preparation apparatus comprising:
- a sample stage configured to support a sample;
- a focused ion beam column configured to irradiate the sample with a focused ion beam to process the sample;
- and
- an irradiation area setting unit configured to set, for the sample, first and second irradiation areas that can be irradiated by the focused ion beam to process the sample to a shape that forms an electron back-scattering pattern when irradiated with an electron beam, the first irradiation area corresponding to an observation field of the sample which can be irradiated with an electron beam to generate backscattered electrons, and the second irradiation area corresponding to a tilted surface of the sample which extends from the observation field to a surface of the sample and which is tilted with respect to a direction normal to the observation field at an angle of 67.5° or more and less than 90°.
Dependencies are inferred from the claim text.