Multi-wiring layer solid-state imaging device with increased sensitivity, electronic apparatus, and method for manufacturing same
AssigneeSony Corporation
InventorsKyohei Mizuta, Kazuichiro Itonaga
Life of this patent
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Abstract
A solid state imaging device is described that includes a semiconductor substrate having a plurality of photodiodes thereon. The solid state imaging device further includes a first wiring portion, a second wiring portion and a third wiring portion. The device further includes a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions. Additionally, a second wiring layer is disposed over the first wiring layer and which extends across the first wiring portion and the second wiring portion.
Claims25
A solid state imaging device comprising:
- a semiconductor substrate having a plurality of photodiodes thereon and a first wiring portion, a second wiring portion and a third wiring portion;
- a boundary between the first wiring portion and the second wiring portion;
- a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions;
- a second wiring layer over the first wiring layer and which extends across the first wiring portion and the second wiring portion;
- and
- a third wiring layer over the second wiring layer and which extends across the first wiring portion and includes a plurality of metal films,
- wherein a primary height of the first wiring portion at approximately the boundary is different than a secondary height of the second wiring portion at approximately the boundary, and
- wherein the second wiring layer is comprised of an upper layer located closer to the third wiring layer and which includes a shielding film and a lower layer which is closer to the first wiring layer and which includes a shielding film, and the shielding film in the lower layer is closer to the boundary between the first wiring portion and second wiring portion than the shielding film in the upper layer.
A method of creating a solid state imaging device comprising the steps of:
- forming a plurality of photodiodes in a third wiring portion of a semiconductor substrate which has a first wiring portion, a second wiring portion and the third wiring portion, and having a boundary between the first wiring portion and the second wiring portion;
- forming over the semiconductor substrate a first wiring layer which includes a plurality of metal films and which extends across all the wiring portions;
- and
- forming over the first wiring layer a second wiring layer which extends over the first wiring portion and the second wiring portion;
- forming over the first wiring layer a third wiring layer which extends across the first wiring portion and includes a plurality of metal films,
- wherein a primary height of the first wiring portion formed at approximately the boundary is different than a secondary height of the second wiring portion formed at approximately the boundary, and
- wherein the second wiring layer is comprised of an upper layer located closer to the third wiring layer and which includes a shielding film and a lower layer which is closer to the first wiring layer and which includes a shielding film, and the shielding film in the lower layer is closer to the boundary between the first wiring portion and second wiring portion than the shielding film in the upper layer.
An electronic apparatus comprising:
- an optical system;
- and a solid-state imaging device which receives light from the optical system, the solid-state imaging device including:
- a semiconductor substrate having a plurality of photodiodes thereon and a first wiring portion, a second wiring portion and a third wiring portion;
- a boundary between the first wiring portion and the second wiring portion;
- a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions;
- a second wiring layer over the first wiring layer and which extends across the first wiring portion and the second wiring portion;
- and
- a third wiring layer over the second wiring layer and which extends across the first wiring portion and includes a plurality of metal films,
- wherein a primary height of the first wiring portion at approximately the boundary is different than a secondary height of the second wiring portion at approximately the boundary, and
- wherein the second wiring layer is comprised of an upper layer located closer to the third wiring layer and which includes a shielding film and a lower layer which is closer to the first wiring layer and which includes a shielding film, and the shielding film in the lower layer is closer to the boundary between the first wiring portion and second wiring portion than the shielding film in the upper layer.
Dependencies are inferred from the claim text.