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US 8,802,579 B2Granted
Semiconductor structure and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsChien-Liang Lin, Shao-Wei Wang, Yu-Ren Wang, Ying-Wei Yen
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Abstract
A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.
Claims17
A semiconductor process, comprising:
- providing a substrate;
- forming a dielectric layer having a high dielectric constant on the substrate, wherein the steps of forming the dielectric layer having a high dielectric constant comprise repeatedly performing the following steps:
- (a) forming a metallic oxide layer;
- (b) performing an annealing process comprising an oxygen containing annealing process to the metallic oxide layer right after the metallic oxide layer is formed;
- and
- performing a nitridation process to nitride the surface of the dielectric layer having a high dielectric constant.
3 more elements
A semiconductor structure, comprising:
- a substrate;
- and
- a dielectric layer having a high dielectric constant disposed on the substrate, wherein the dielectric layer having a high dielectric constant comprises a plurality of metallic oxide layers and an annealing interface is between each of the metallic oxide layers, and nitrogen atoms are concentrated on a surface of the dielectric layer having a high dielectric constant, wherein boundaries are within every metallic oxide layers and the boundaries between each metallic oxide layer are discontinuous.
Dependencies are inferred from the claim text.