Methods of etching trenches into silicon of a semiconductor substrate, methods of forming trench isolation in silicon of a semiconductor substrate, and methods of forming a plurality of diodes
AssigneeMicron Technology, Inc.
InventorKrupakar M. Subramanian
Life of this patent
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Abstract
A method of etching trenches into silicon of a semiconductor substrate includes forming a mask over silicon of a semiconductor substrate, with the mask comprising trenches formed there-through. Plasma etching is conducted to form trenches into the silicon of the semiconductor substrate using the mask. In one embodiment, the plasma etching includes forming an etching plasma using precursor gases which include SF6, an oxygen-containing compound, and a nitrogen-containing compound. In one embodiment, the plasma etching includes an etching plasma which includes a sulfur-containing component, an oxygen-containing component, and NFx.
Claims6
A method of etching trenches into silicon of a semiconductor substrate, comprising:
- forming a mask over silicon of a semiconductor substrate, the mask comprising trenches formed there-through;
- and
- plasma etching tapered trenches into the silicon of the semiconductor substrate using the mask, the trenches passing through at least two differently doped silicon layers, the plasma etching comprising forming an etching plasma using precursor gases consisting of SF6, an oxygen-containing compound, a nitrogen-containing compound, at least one nitrogen-containing compound and optionally HBr.
Dependencies are inferred from the claim text.