Copper interconnect structures and methods of making same

A method, comprising:

• forming a dielectric layer on a substrate;
• simultaneously forming a first trench and a second trench in said dielectric layer;
• simultaneously forming a first liner on sidewalls and a bottom of said first trench and a second liner on sidewalls an a bottom of said second trench;
• simultaneously filling all remaining space in said first trench with a first copper layer to form a first wire in said dielectric layer and filling all remaining space in said second trench with a second copper layer to form a second wire in said dielectric layer;
• forming a third trench in said dielectric layer;
• forming a third liner on sidewalls and a bottom of said third trench;
• and
• filling all remaining space in said third trench with a third copper layer to form an electromigration stop in said dielectric layer, said electromigration stop between and abutting respective ends of said first wire and said second wire.