Barrier layer on bump and non-wettable coating on trace
AssigneeQUALCOMM Incorporated
InventorsOmar J. Bchir, Milind P. Shah, Houssam W. Jomaa, Manuel Aldrete, Chin-Kwan Kim
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Abstract
Some implementations provide a semiconductor device that includes a die, an under bump metallization (UBM) structure coupled to the die, and a barrier layer. The UBM structure has a first oxide property. The barrier layer has a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure. The barrier layer includes a top portion, a bottom portion and a side portion. The top portion is coupled to the UBM structure, and the side portion is substantially oxidized.
Claims20
A semiconductor device comprising:
- a die;
- an under bump metallization (UBM) structure coupled to the die, the UBM structure having a first oxide property;
- and
- a barrier layer having a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure, the barrier layer comprising a top portion, a bottom portion and a side portion, the top portion coupled to the UBM structure, the side portion being substantially oxidized.
A semiconductor device comprising:
- a die;
- a first interconnect means coupled to the die, the first interconnect means having a first oxide property;
- and
- a second interconnect means having a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the first interconnect means, the second interconnect means comprising a top portion, a bottom portion and a side portion, the top portion coupled to the first interconnect means, the side portion being substantially oxidized.
A method for manufacturing a semiconductor device, comprising:
- providing a die;
- providing an under bump metallization (UBM) structure coupled to the die, the UBM structure having a first oxide property;
- and
- providing a barrier layer coupled to the UBM structure, the barrier layer having a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure, the barrier layer comprising a top portion, a bottom portion and a side portion, the top portion coupled to the UBM structure, the side portion being substantially oxidized.
Dependencies are inferred from the claim text.