Semiconductor surface modification
AssigneeSiOnyx, Inc.
InventorsJason Sickler, Keith Donaldson
Life of this patent
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Abstract
Methods, systems, and devices associated with surface modifying a semiconductor material are taught. One such method includes providing a semiconductor material having a target region and providing a dopant fluid layer that is adjacent to the target region of the semiconductor material, where the dopant fluid layer includes at least one dopant. The target region of the semiconductor material is lased so as to incorporate the dopant or to surface modify the semiconductor material. During the surface modification, the dopant in the dopant fluid layer is actively replenished.
Claims11
A method for surface modifying a semiconductor material, comprising:
- providing a semiconductor material having a target region;
- providing a barrier fluid layer adjacent to the target region of the semiconductor material;
- providing a dopant fluid layer disposed between the semiconductor material and the barrier fluid layer;
- and
- lasing the target region of the semiconductor material through the barrier fluid layer to surface modify the target region of the semiconductor material, wherein the lasing is performed in an enclosure that is devoid of a cover and with a laser pulse duration of between about 50 femtoseconds and about 50 picoseconds.
Dependencies are inferred from the claim text.