Method and apparatus for forming amorphous silicon film
AssigneeTokyo Electron Limited
InventorsAkinobu Kakimoto, Satoshi Takagi, Kazumasa Igarashi
Life of this patent
Estimating the term…
Abstract
A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.
Claims10
A method of forming an amorphous silicon film on a base, the method comprising:
- forming a seed layer on a surface of the base by heating the base and supplying an amino silane-based gas to the heated base;
- forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base;
- and
- etching the amorphous silicon film formed with thickness for layer growth to decrease a film thickness of the amorphous silicon film.
Dependencies are inferred from the claim text.