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US 8,802,540 B2Granted
Method of manufacturing bonded wafer
AssigneeSumco Corporation
InventorsNobuyuki Morimoto, Akihiko Endo
Life of this patent
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Abstract
The present invention provides a method of manufacturing a bonded wafer. The method includes ozone washing two silicon wafers to form an oxide film equal to or less than 2.2 nm in thickness on each surface of the two silicon wafers, and bonding the two silicon wafers through the oxide films formed to obtain a bonded wafer.
Claims9
A method of manufacturing a bonded wafer comprising:
- ozone washing two silicon wafers to form an oxide film equal to or less than 2.2 nm in thickness on each surface of the two silicon wafers, and
- bonding the two silicon wafers through the oxide films formed to obtain a bonded wafer.
Dependencies are inferred from the claim text.