Charge reservoir structure

A process for preparing a semiconductor-on-insulator (SeOI) type structure that includes a semiconductor layer of a donor substrate, an insulator layer and a semiconductor receiver substrate, which process comprises:

• bonding of the donor substrate to the receiver substrate, with one of the substrates being provided on its bonding surface with an insulator layer for contacting the bonding surface of the other substrate at a bonding interface, and
• forming at the bonding interface a trapping interface comprising electrically active defects which act as traps for retaining charge carriers, with the bonding surfaces on either side of the trapping interface being in direct contact and not separated by a continuous surface, wherein the trapping interface has a contaminant concentration of between 1012 and 1015 atoms/cm2;
• wherein the electrically active defects are formed on the surface of the other substrate prior to bonding;
• wherein defects forming the trapping interface are located at a certain constant depth (Z) within the SeOI-type substrate, and
• wherein the defects are obtained by a treatment comprising depositing contaminants on at least one of the bonding surfaces, and the treatment comprises spin-coating of a solution containing the contaminants, with the contaminants comprising germanium, dopants of column III, IV or V elements, ions of K+, Na+, F−, or Cl−, or iron or aluminum metal.

A semiconductor-on-insulator (SeOI) structure comprising:

• a semiconductor layer of a donor substrate, a semiconductor receiver substrate, an insulator layer present at an interface between bonding surfaces of the donor and receiver substrates, and
• electrically active defects present on one of the substrates at the interface between the donor and receiver substrates;
• a trapping interface located between the insulator layer and the other substrate, with the bonding surfaces on either side of the trapping interface being in direct contact and not separated by a continuous surface,
• wherein the trapping interface comprises the electrically active defects which act as traps for retaining charge carriers;
• wherein defects forming the trapping interface are located at a certain constant depth (Z) within the SeOI structure;
• and
• wherein the receiver substrate includes a control dielectric layer, and is a composite substrate comprising a base substrate, an oxide layer and a conductive or semiconductor layer located beneath the control dielectric layer.

A process for preparing a semiconductor-on-insulator (SeOI) type structure that includes a semiconductor layer of a donor substrate, an insulator layer and a semiconductor receiver substrate, which process comprises:

• implanting dopants having a density greater than 1017 cm−3 in the receiver substrate to form a conductive doped layer;
• bonding of the donor substrate to the receiver substrate, with one of the substrates being provided on its bonding surface with an insulator layer for contacting the bonding surface of the other substrate at a bonding interface, and
• forming at the bonding interface a trapping interface comprising electrically active defects which act as traps for retaining charge carriers, with the bonding surfaces on either side of the trapping interface being in direct contact and not separated by a continuous surface;
• wherein electrically active defects are formed on the surface of the other substrate prior to bonding;
• and
• wherein defects forming the trapping interface are located at a certain constant depth (Z) within the SeOI-type substrate.