Phase-change memory device and method of fabricating the same
AssigneeSK hynix Inc.
InventorsKeun Lee, Jin Hyock Kim, Young Seok Kwon
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Abstract
A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.
Claims16
A method of fabricating a phase-change memory device, comprising:
- forming a phase-change area having a hole type exposing a lower electrode formed on a semiconductor substrate;
- uniformly forming a first material-rich first phase-change layer comprised of a hetero compound of the first material and a second material only on sidewalls and bottom of the phase-change area;
- and
- forming a second phase-change layer on a surface of the first phase-change layer to fill the phase-change area.
The method of 8, wherein the second phase-change layer is formed using a mixed source of third to fifth materials.
Dependencies are inferred from the claim text.