US 8,802,534 B2Granted

Method for forming SOI substrate and apparatus for forming the same

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsYoshihiro Komatsu, Tomoaki Moriwaka, Kojiro Takahashi

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Abstract

A bond substrate is attached with an incline toward the setting surface of a base substrate. Accordingly, an attachment starting portion can be limited. Further, the bond substrate is provided so that part of the bond substrate extends beyond a support base and the part is closest to the base substrate. Because of this, part of the bond substrate is separated from the support base with the use of an end portion of the support base as a fulcrum point because the support base is not provided below the contact portion, and attachment sequentially proceeds from a portion which gets close to the base substrate; thus, stable attachment can be performed without an air layer remaining at the interface between the bond substrate and the base substrate.

Claims10

Dependent claims

A method for forming an SOI substrate comprising:

setting a base substrate on an upper support base;
setting a bond substrate on entire surfaces of which an insulating layer is formed and which comprises a microbubble region to a lower support base so that at least an end portion of the bond substrate extends beyond the lower support base;
making the bond substrate close to the base substrate with the bond substrate inclined toward a setting surface of the base substrate so that part of the end portion of the bond substrate is in contact with the base substrate;
making the part of the end portion of the bond substrate be in contact with the base substrate and applying pressing force to a contact portion and periphery of the contact portion, so that part of the bond substrate is separated from the lower support base with the use of an end portion of the lower support base as a fulcrum point and the bond substrate is spontaneously attached to the base substrate;
heating the bond substrate;
and
separating the bond substrate from the base substrate, so that part of the bond substrate and the insulating layer which is formed on the entire surfaces of the bond substrate are transferred to the base substrate.

4 more elements

A method for forming an SOI substrate comprising:

forming an insulating layer on a bond substrate;
forming a microbubble region in the bond substrate;
setting a base substrate on an upper support base;
setting the bond substrate to a lower support base so that at least an end portion of the bond substrate extends beyond the lower support base;
making the bond substrate close to the base substrate with the bond substrate inclined toward a setting surface of the base substrate so that part of the end portion of the bond substrate is in contact with the base substrate;
making the part of the end portion of the bond substrate be in contact with the base substrate and applying pressing force to a contact portion and periphery of the contact portion, so that part of the bond substrate is separated from the lower support base with the use of an end portion of the lower support base as a fulcrum point and the bond substrate is spontaneously attached to the base substrate;
heating the bond substrate;
and
separating the bond substrate from the base substrate, so that part of the bond substrate and the insulating layer which is formed on the entire surfaces of the bond substrate are transferred to the base substrate.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/488,854Filed 5 Jun 2012
Priority: JP 2011-13237814 Jun 2011
Published: US 2012/0322228 A120 Dec 2012
Granted: 12 Aug 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 86/01
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 86/0212
Of multiple TFTs: comprising manufacture, treatment or coating of substrates
H10P 72/0428
Apparatus for manufacture or treatment: apparatus for mechanical treatment or grinding or cutting
H10P 90/1906
Preparing vertically inhomogeneous wafers: preparing SOI wafers