Split-channel transistor and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKrishna Kumar Bhuwalka, Gerben Doornbos, Matthias Passlack
Life of this patent
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Abstract
A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel.
Claims18
A method comprising:
- forming a second semiconductor material on a top surface and sidewalls of a first semiconductor material, wherein the first semiconductor material has a first bandgap, and the second semiconductor material has a second bandgap smaller that the first bandgap;
- forming a gate insulator on sidewalls of the second semiconductor material, wherein the gate insulator overlaps substantially an entirety of the first semiconductor material;
- forming a gate electrode on the gate insulator;
- and
- forming a drain region and a source region, wherein the drain region and the source region are substantially free from the first semiconductor material.
A method comprising:
- removing a portion of a semiconductor substrate between Shallow Trench Isolation (STI) regions to form a recess;
- epitaxially growing a first III-V compound semiconductor material in the recess;
- recessing the STI regions, wherein a portion of the first III-V compound semiconductor material forms a fin protruding above top surfaces of the STI regions, with the first III-V compound semiconductor material having a first bandgap;
- epitaxially growing a second III-V compound semiconductor material on sidewalls of the first III-V compound semiconductor material, with the second III-V compound semiconductor material having a second bandgap smaller that the first bandgap;
- forming a gate insulator on sidewalls of the second III-V compound semiconductor material;
- and
- forming a gate electrode over the gate insulator.
A method comprising:
- forming a semiconductor fin comprising a first III-V compound semiconductor material having a first bandgap, wherein the forming the semiconductor fin comprises:
- removing a portion of a semiconductor substrate between Shallow Trench Isolation (STI) regions to form a recess;
- epitaxially growing the first III-V compound semiconductor material in the recess;
- and
- recessing the STI regions;
- growing a second III-V compound semiconductor material on a top surface and sidewalls of the first III-V compound semiconductor material, with the second III-V compound semiconductor material having a second bandgap smaller that the first bandgap;
- forming a gate insulator over a middle portion of the first and the second III-V compound semiconductor materials;
- forming a gate electrode over the gate insulator;
- and
- doping end portions of the first III-V compound semiconductor material and the second III-V compound semiconductor material with impurities to form source and drain regions.
Dependencies are inferred from the claim text.