Vertical PMOS field effect transistor and manufacturing method thereof

A manufacturing method of a PMOS field effect transistor, comprising:

• providing a N-typed Si substrate;
• forming a oxide layer on the N-typed Si substrate, and depositing a first dielectric layer on the oxide layer;
• etching part of the first dielectric layer and the oxide layer by the photolithography technology to form a substrate concave trough, wherein the surface layer of the N-typed Si substrate that corresponds to the substrate concave trough forms a first doping area;
• cleaning the surface of the substrate concave trough and the first dielectric layer by a etching liquid;
• depositing a first strained Si—Ge layer, an epitaxial Si layer and a second strained Si—Ge layer on the substrate concave trough and the first dielectric layer in order and forming a second doping area on the surface layer of the second strained Si—Ge layer;
• forming a buffer oxide layer is formed on the second strained Si—Ge layer, and depositing a hard-mask layer on the buffer oxide layer;
• etching part of the hard-mask layer, the buffer oxide layer, the second nitride layer, the epitaxial Si layer and the first strained Si—Ge layer by the photolithography technology to form a mesa structure;
• forming two gate oxide films on two sides of the mesa structure, and depositing a gate stack layer on the mesa structure and the first dielectric layer;
• etching part of the gate stack layer to make the gate stack layer be stacked on the two sides of the mesa structure and the first dielectric layer;
• depositing a second dielectric layer on the mesa structure, the gate stack layer and the first dielectric layer;
• and
• etching part of the second dielectric layer and the first dielectric layer by the photolithography technology to make the second dielectric layer be stacked on two sides of the mesa structure and the gate stack layer.