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US 8,802,525 B2Granted
Methods of forming charge storage structures including etching diffused regions to form recesses
AssigneeMicron Technology, Inc.
InventorsAlex Schrinsky, Anish Khandekar, Pavan Aella, Niraj B. Rana
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Abstract
Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
Claims24
A method, comprising:
- forming a diffused region into a semiconductor material exposed to an opening in a substrate;
- selectively etching the diffused region to form a recess in the semiconductor material, wherein etching substantially stops at an interface between the diffused region and the semiconductor material;
- and
- forming a charge storage structure in the recess.
1 more element
A method, comprising:
- diffusing an n-type dopant into a p-type semiconductor material exposed to an opening in a substrate to form an n-type region extending a distance into the p-type semiconductor material from a sidewall of the opening;
- and
- selectively etching the n-type region to form a recess in the p-type semiconductor material, wherein etching substantially stops at an interface between the n-type region and the p-type semiconductor material.
A method comprising:
- forming a stack of alternating layers of semiconductor material and dielectric material;
- forming an opening within the stack;
- diffusing a dopant into the semiconductor material exposed to the opening to form a plurality of diffused regions, each of the diffused regions extending a distance into the semiconductor material from a sidewall of the opening;
- selectively etching the diffused regions to form recesses in the semiconductor material, wherein etching substantially stops at each interface between the semiconductor material and the diffused regions;
- forming a first cell dielectric material within the recesses;
- forming charge storage structures over the first cell dielectric material within the recesses;
- and
- forming a channel region within the opening, separated from the charge storage structures by a second cell dielectric material.
5 more elements
A method comprising:
- forming a stack of alternating p-type polysilicon and dielectric layers;
- forming an opening within the stack;
- diffusing an n-type dopant into the p-type polysilicon exposed to the opening to form a plurality of n-type regions, each of the n-type regions extending a distance into the p-type polysilicon from a sidewall of the opening;
- selectively etching the n-type regions to form recesses in the p-type polysilicon, wherein etching substantially stops at each interface between the n-type regions and the p-type polysilicon;
- and
- forming charge storage structures within the recesses.
3 more elements
Dependencies are inferred from the claim text.