Semiconductor fin-shaped structure and manufacturing process thereof
AssigneeUnited Microelectronics Corp.
InventorsChing-Wen Hung, Chih-Sen Huang, Shih-Fang Hong
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Abstract
The present invention provides a method for forming a fin structure comprising the following steps: first, a substrate is provided and a plurality of fin structures, a plurality of first dummy fin structures and a plurality of second dummy fin structures are formed on the substrate; a first patterned photoresist is used as a hard mask to perform a first etching process to remove each first dummy fin structure; then a second patterned photoresist is used as a hard mask to perform a second etching process to remove each second dummy fin structure, wherein the pattern density of the first patterned photoresist is higher than the pattern density of the second patterned.
Claims16
A method for forming a fin structure, comprising the following steps:
- providing a substrate and a plurality of fin structures, a plurality of first dummy fin structures and a plurality of second dummy fin structures disposed on the substrate;
- using a first patterned photoresist as a hard mask to perform a first etching process and to remove each first dummy fin structure;
- and
- after the first etching process is performed, using a second patterned photoresist as a hard mask to perform a second etching process to remove each second dummy fin structure, wherein a pattern density of the first patterned photoresist is higher than a pattern density of the second patterned.
A fin structure, comprising:
- a long thin fin structure;
- a short wide fin structure disposed between the long thin fin structure and a substrate;
- a first isolating layer disposed on the side of the short wide fin structure;
- and
- a second isolating layer disposed between the long thin fin structure and the first isolating layer, and disposed on the short wide fin structure.
Dependencies are inferred from the claim text.