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AssigneeMicron Technology, Inc.
InventorsSanh D. Tang, Michael P. Violette, Robert Burke
Estimating the term…
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
A method of forming a field effect transistor having laterally spaced elevated source/drains on a substrate comprising forming and laterally spacing elevated source/drain material of the transistor prior to final patterning which defines the lateral peripheral outline of active area where such physically contacts field isolation and which defines the lateral peripheral outline of the field isolation where such physically contacts the active area.
A method of forming a field effect transistor having laterally spaced elevated source/drains on a substrate comprising forming and laterally spacing elevated source/drain material of the transistor prior to final patterning which defines the lateral peripheral outline of active area where such physically contacts field isolation and which defines the lateral peripheral outline of the field isolation where such physically contacts the active area, the final patterning comprising etching into the laterally spaced elevated source/drain material.
Dependencies are inferred from the claim text.