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US 8,802,519 B2Granted
Work function adjustment with the implant of lanthanides
AssigneeTexas Instruments Incorporated
InventorsManfred Ramin, Michael F. Pas, Husam N. Alshareef
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Abstract
Semiconductor devices and fabrication methods are provided, in which fully silicided gates are provided. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.
Claims3
A method of forming a transistor, comprising:
- forming a gate dielectric over a semiconductor body, wherein the gate dielectric comprises a lanthanide series material in a top portion thereof;
- and
- forming a silicon gate electrode over the gate dielectric.
Dependencies are inferred from the claim text.