Semiconductor device and method of forming a protective layer on a backside of the wafer

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer;
• forming an interconnect structure on a first surface of the semiconductor wafer;
• forming a protective layer on an entire second surface of the semiconductor wafer opposite the first surface containing the interconnect structure;
• singulating the semiconductor wafer into semiconductor die after forming the protective layer on the entire second surface of the semiconductor wafer so that the protective layer terminates at an edge of the second surface of the semiconductor die;
• disposing the semiconductor die within a pressurized cavity;
• forming a molding compound around a side of the semiconductor die and around the interconnect structure within the pressurized cavity, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the molding process;
• and
• removing the entire protective layer from the semiconductor die after forming the molding compound around the semiconductor die and interconnect structure leaving the entire second surface of the semiconductor die devoid of the molding compound for heat dissipation from the semiconductor die.

A semiconductor device, comprising:

• a semiconductor die;
• an interconnect structure formed on a first surface of the semiconductor die;
• a protective layer formed on an entire second surface of the semiconductor die opposite the first surface containing the interconnect structure, the protective layer terminating at an edge of the second surface of the semiconductor die;
• and
• a molding compound formed around a side of the semiconductor die and around the interconnect structure, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the molding process, and the entire protective layer is removed from the semiconductor die after forming the molding compound around the semiconductor die and interconnect structure leaving the entire second surface of the semiconductor die devoid of the molding compound for heat dissipation.

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• forming an interconnect structure over a first surface of the semiconductor die;
• forming a protective layer over an entire second surface of the semiconductor die opposite the first surface so that the protective layer terminates at an edge of the second surface of the semiconductor die;
• forming an encapsulant around a side of the semiconductor die and around the interconnect structure under pressure, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the encapsulation process;
• and
• removing the entire protective layer from the semiconductor die after forming the encapsulant around the semiconductor die and interconnect structure leaving the entire second surface of the semiconductor die devoid of the encapsulant for heat dissipation.

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• forming an interconnect structure over a first surface of the semiconductor die;
• forming a protective layer over an entire second surface of the semiconductor die opposite the first surface so that the protective layer terminates at an edge of the second surface of the semiconductor die;
• and
• forming an encapsulant around a side of the semiconductor die and around the interconnect structure under pressure, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the encapsulation process;
• and
• removing the protective layer for heat dissipation from the second surface of the semiconductor die.

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• forming a protective layer over a first surface of the semiconductor die;
• forming an encapsulant around the semiconductor die under pressure, wherein the protective layer protects the semiconductor die from stress and cracking;
• and
• removing at least a portion of the protective layer from the semiconductor die for heat dissipation.