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US 8,802,492 B2Granted
Method for forming resistive switching memory elements
AssigneesIntermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLC
InventorsJinhong Tong, Randall Higuchi, Imran Hashim, Vidyut Gopal
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Abstract
Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.
Claims19
A method for forming resistive switching elements in an atomic layer deposition (ALD) process, the method comprising:
- depositing a first metal precursor;
- purging any excess quantity of the first metal precursor;
- prior to oxidizing the first metal precursor, depositing a first dopant precursor;
- purging any excess quantity of the first dopant;
- oxidizing the first metal precursor and the first dopant precursor with a reagent,
- wherein oxidizing the first metal precursor and the first dopant precursor forms a doped metal oxide,
- the doped metal oxide being operable as a resistive switching element of a resistive random access memory (RRAM) cell;
- and
- purging any excess quantity of the reagent,
- wherein depositing the first metal precursor, purging any excess quantity of the first metal precursor and depositing the first dopant precursor are performed sequentially.
7 more elements
Dependencies are inferred from the claim text.